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AFP3435W, AFP3435W-Alfa Datasheet - Alfa-MOS

AFP3435W P-Channel MOSFET

AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP3435W Features

* -200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design

* in SOT-23-6L package design Application Active Clamp Circuits in DC/DC

AFP3435W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP3435W, AFP3435W-Alfa. Please refer to the document for exact specifications by model.
AFP3435W Datasheet Preview Page 2 AFP3435W Datasheet Preview Page 3

Datasheet Details

Part number:

AFP3435W, AFP3435W-Alfa

Manufacturer:

Alfa-MOS

File Size:

582.80 KB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP3435W, AFP3435W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP3435W AFP3435W-Alfa P-Channel MOSFET Alfa-MOS

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