AFP3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFP3401S Features
* -30V/-4.0A,RDS(ON)=65mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=80mΩ@VGS=-4.5V -30V/-1.0A,RDS(ON)=105mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S
Datasheet Details
AFP3401S, AFP3401S-Alfa
Alfa-MOS
633.98 KB
P-channel enhancement mode mosfet.
This datasheet PDF includes multiple part numbers: AFP3401S, AFP3401S-Alfa.
Please refer to the document for exact specifications by model.
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