AFP3411, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descriptio
AFP3411 Features
* -30V/-6.0A,RDS(ON)=32mΩ@VGS=10V -30V/-4.5A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part
Datasheet Details
AFP3411, AFP3411-Alfa
Alfa-MOS
480.57 KB
P-channel mosfet.
This datasheet PDF includes multiple part numbers: AFP3411, AFP3411-Alfa.
Please refer to the document for exact specifications by model.
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