AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los
AFP3415EA Features
* -20V/-4.5A,RDS(ON)=41mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Portable Equipment Battery Powered
Datasheet Details
AFP3415EA, AFP3415EA-Alfa
Alfa-MOS
690.24 KB
P-channel mosfet.
This datasheet PDF includes multiple part numbers: AFP3415EA, AFP3415EA-Alfa.
Please refer to the document for exact specifications by model.
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