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AFP3415EA

P-Channel MOSFET

AFP3415EA Features

* -20V/-4.5A,RDS(ON)=41mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Portable Equipment Battery Powered

AFP3415EA General Description

AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFP3415EA Datasheet (690.24 KB)

Preview of AFP3415EA PDF

Datasheet Details

Part number:

AFP3415EA

Manufacturer:

Alfa-MOS

File Size:

690.24 KB

Description:

P-channel mosfet.

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TAGS

AFP3415EA P-Channel MOSFET Alfa-MOS

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