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AFP3413

P-Channel Enhancement Mode MOSFET

AFP3413 Features

* -20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=125mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=205mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable E

AFP3413 General Description

AFP3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP3413 Datasheet (519.50 KB)

Preview of AFP3413 PDF

Datasheet Details

Part number:

AFP3413

Manufacturer:

Alfa-MOS

File Size:

519.50 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP3413 P-Channel Enhancement Mode MOSFET Alfa-MOS

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