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AFP3415

P-Channel Enhancement Mode MOSFET

AFP3415 Features

* -20V/-4.9A,RDS(ON)=43mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=55mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=75mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net

AFP3415 General Description

AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP3415 Datasheet (556.77 KB)

Preview of AFP3415 PDF

Datasheet Details

Part number:

AFP3415

Manufacturer:

Alfa-MOS

File Size:

556.77 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP3415 P-Channel Enhancement Mode MOSFET Alfa-MOS

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