AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFP3415 Features
* -20V/-4.9A,RDS(ON)=43mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=55mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=75mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net
Datasheet Details
AFP3415, AFP3415-Alfa
Alfa-MOS
556.77 KB
P-channel enhancement mode mosfet.
This datasheet PDF includes multiple part numbers: AFP3415, AFP3415-Alfa.
Please refer to the document for exact specifications by model.
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