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AFP3447W

P-Channel MOSFET

AFP3447W Features

* -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Design SOT-23-6L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin De

AFP3447W General Description

AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP3447W Datasheet (574.21 KB)

Preview of AFP3447W PDF

Datasheet Details

Part number:

AFP3447W

Manufacturer:

Alfa-MOS

File Size:

574.21 KB

Description:

P-channel mosfet.

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AFP3447W P-Channel MOSFET Alfa-MOS

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