AFP3459, AFP3459-Alfa Datasheet - Alfa-MOS

AFP3459 P-Channel MOSFET

AFP3459, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP3459 Features

* -60V/-4.8A,RDS(ON)=128mΩ@VGS=-10V -60V/-3.6A,RDS(ON)=138mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Equipment Battery Powered System Net Wo

AFP3459-Alfa-MOS.pdf