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AFP3481S

P-Channel MOSFET

AFP3481S Features

* -30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Defi

AFP3481S General Description

AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP3481S Datasheet (644.27 KB)

Preview of AFP3481S PDF

Datasheet Details

Part number:

AFP3481S

Manufacturer:

Alfa-MOS

File Size:

644.27 KB

Description:

P-channel mosfet.

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TAGS

AFP3481S P-Channel MOSFET Alfa-MOS

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