AFP3497, AFP3497-Alfa Datasheet - Alfa-MOS

AFP3497 P-Channel MOSFET

AFP3497, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP3497 Features

* -20V/-3.8A,RDS(ON)=100mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=140mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=190mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Equ

AFP3497-Alfa-MOS.pdf