AFP4943WS, AFP4943WS-Alfa Datasheet - Alfa-MOS

AFP4943WS P-Channel MOSFET

AFP4943WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFP4943WS Features

* -20V/ -9.0A,RDS(ON)=23mΩ@VGS=-4.5V -20V/ -7.0A,RDS(ON)=28mΩ@VGS=-2.5V -20V/ -3.0A,RDS(ON)=35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Load Switching - Computer - Game Systems Battery Switching - 2-Cell Li-Ion Pin Define Pin 1 2 3 4 5

AFP4943WS-Alfa-MOS.pdf