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AFP4978WS, AFP4978WS-Alfa P-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFP4978WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFP4978WS, AFP4978WS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFP4978WS, AFP4978WS-Alfa
Manufacturer
Alfa-MOS
File Size
339.89 KB
Datasheet
AFP4978WS-Alfa-MOS.pdf
Description
P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP4978WS, AFP4978WS-Alfa.
Please refer to the document for exact specifications by model.

Features

* -60V/-6A,RDS(ON)= 40mΩ@VGS= -10V
* -60V/-5A,RDS(ON)= 48mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)

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