AS7C33512FT18A Datasheet (Alliance Semiconductor Corporation) - 3.3V 512K x 18 Flow-through synchronous SRAM

AS7C33512FT18A, 3.3V 512K x 18 Flow-through synchronous SRAM

The AS7C33512FT18A is a high-performance CMOS 8-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words × 18 bits.

Fast cycle times of 8.5/10/12 ns with clock access times (tCD) of 7.5/8.5/10ns.

Three chip enable (CE) inputs permit easy memory expansion.

Burst operation

AS7C33512FT18A Features

* Organization: 524,288 words × 18 bits Fast clock to data access: 7.5/8.5/10ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP package Individual