AS7C3364PFD32B (AS7C3364PFD32B / AS7C3364PFD36B) 3.3V 64K X 32/36 pipeline burst synchronous SRAM

Alliance Semiconductor Corporation

Description

February 2005 ® AS7C3364PFD32B AS7C3364PFD36B 3.3V 64K X 32/36 pipeline burst synchronous SRAM .
The AS7C3364PFD32B and AS7C3364PFD36B are high-performance CMOS 2-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 65,536 word.

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Datasheet Specifications

Part number: AS7C3364PFD32B
Manufacturer: Alliance Semiconductor Corporation
File Size: 595.03 KB
Datasheet: AS7C3364PFD32B_AllianceSemiconductorCorporation.pdf
Description: (AS7C3364PFD32B / AS7C3364PFD36B) 3.3V 64K X 32/36 pipeline burst synchronous SRAM

Features

* Organization: 65,536 words × 32 or 36 bits
* Fast clock speeds to 200 MHz
* Fast clock to data access: 3.0/3.5/4.0 ns
* Fast OE access time: 3.0/3.5/4.0 ns
* Fully synchronous register-to-register operation
* Double-cycle deselect
* Asynchron

Applications

* Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable GWE writes all 32/36 bits regardless of the state of individual BW[a:d] inputs. Alternately, when GWE is High, one or more bytes may be written by asserting BWE and the appropriat

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AS7C3364PFD32B AS7C3364PFD32B AS7C3364PFD36B 3.3V 64K pipeline burst synchronous SRAM Alliance Semiconductor Corporation

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