Description
High Performance 1M×4 CMOS DRAM AS4C14400 AS4C14405 ® 1M-bit × 4 CMOS DRAM (Fast page mode or EDO) Preliminary information .
26 25 24 23 22
GND I/O3 I/O2 CAS OE
I/O0 I/O1 WE RAS A9
1 2 3 4 5
26 25 24 23 22
GND I/O3 I/O2 CAS OE
Address inputs Input/output
Row address.
Features
* Organization: 1,048,576 words × 4 bits
* High speed
- 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time
* 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
* Low power consump