AS4C16M16D1 - 16M x 16 bit DDR Synchronous DRAM

Alliance Semiconductor

Datasheet Details

Part number	AS4C16M16D1
Manufacturer	Alliance Semiconductor
File Size	1.44 MB
Description	16M x 16 bit DDR Synchronous DRAM
Datasheet	AS4C16M16D1-AllianceSemiconductor.pdf

Table 2.

Fast clock rate: 200MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 4M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte-write mask control.
DM Write Latency = 0.
Auto Refresh and Self Refresh.
8192.

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Published: May 1, 2015 |