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AS4C64M16MD1 Datasheet - Alliance Semiconductor

AS4C64M16MD1 1 Gb (64M x 16 bit) 1.8v High Performance Mobile DDR SDRAM

- 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 or 16 for Sequential Type 2, 4, 8 or 16 for Interleave Type - Automa.

AS4C64M16MD1-AllianceSemiconductor.pdf

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Datasheet Details

Part number:

AS4C64M16MD1

Manufacturer:

Alliance Semiconductor

File Size:

5.43 MB

Description:

1 gb (64m x 16 bit) 1.8v high performance mobile ddr sdram.

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TAGS

AS4C64M16MD1 AS4C64M16MD1 64M bit 1.8v High Performance Mobile DDR SDRAM Alliance Semiconductor

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