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AS4C64M16MD1 - 1 Gb (64M x 16 bit) 1.8v High Performance Mobile DDR SDRAM

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Datasheet Details

Part number AS4C64M16MD1
Manufacturer Alliance Semiconductor
File Size 5.43 MB
Description 1 Gb (64M x 16 bit) 1.8v High Performance Mobile DDR SDRAM
Datasheet download datasheet AS4C64M16MD1-AllianceSemiconductor.pdf

AS4C64M16MD1 Product details

Description

- 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 or 16 for Sequential Type 2, 4, 8 or 16 for Interleave Type - Automatic and Controlled Precharge Command - Power Down Mode - Auto Refresh and Self Refresh - Refresh Interval: 8192 cycles/64ms - Double Data Rate (DDR) - Bidirectional Data Strobe (DQS) for input and out

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