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AO4812A Dual N-Channel MOSFET

AO4812A Description

AO4812A Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO4812A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

AO4812A Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Vol

AO4812A Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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Dual N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO4812A-like datasheet