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AO6701 - P-Channel MOSFET

AO6701 Description

AO6701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO6701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

AO6701 Features

* VDS (V) = -30V ID = -2.3A (VGS = -10V) RDS(ON) < 135mΩ (VGS = -10V) RDS(ON) < 185mΩ (VGS = -4.5V) RDS(ON) < 265mΩ (VGS = -2.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF

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