AO4610 - MOSFET
The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in inverter and other applications.
A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.Standard Product AO4610 is Pb-free (meet
AO4610 Features
* n-channel VDS (V) = 30V ID = 8.5A(VGS=10V) RDS(ON) < 18mΩ (VGS=10V) < 28mΩ (VGS=4.5V) VF
