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AO4615 MOSFET

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Description

AO4615 Complementary Enhancement Mode Field Effect Transistor General .
The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Features

* n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel MOSFET has an additional ROC < 1MΩ for open circuit protection. D2 S2 G2 S1 G1 www. DataSheet4

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