AO4611 - MOSFET
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications).
AO4611
AO4611 Features
* n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.5V) p-channel -60V -4.9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Max
