Datasheet4U Logo Datasheet4U.com

AO4615 - MOSFET

General Description

The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

It is ESD protected.

Key Features

  • n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel MOSFET has an additional ROC < 1MΩ for open circuit protection. D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 ROC S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Volta.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4615 N- and P-Channel MOSFET VBsemi
AO4611 Dual-Channel MOSFET VBsemi
AO4612 Dual-Channel MOSFET VBsemi
AO4613 N- and P-Channel 30V MOSFET VBsemi
AO4614 40V P-Channel and N-Channel MOSFET UMW

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4610 MOSFET
AO4611 MOSFET
AO4612 MOSFET
AO4613 MOSFET
AO4614 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4615 Complementary Enhancement Mode Field Effect Transistor General Description The AO4615 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4615 is Pb-free (meets ROHS & Sony 259 specifications). AO4615L is a Green Product ordering option. AO4615 and AO4615L are electrically identical Features n-channel p-channel VDS (V) = 30V -30V -5.7A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 39m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 62m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) P-channel MOSFET has an additional ROC < 1MΩ for open circuit protection. D2 S2 G2 S1 G1 www.DataSheet4U.