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AO4612 - MOSFET

General Description

The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Key Features

  • n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.5V) 100% Rg tested SOIC-8 Top View Bottom View D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features n-channel VDS (V) = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.5V) p-channel -60V -3.2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.