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AO4616 - 30V Complementary MOSFET

General Description

The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

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AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This comp...

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technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested ESD Protected P-Channel -30V -7A (VGS=-10V) RDS(ON) < 22mΩ (VGS=-10V) < 40mΩ (VGS=-4.

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