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AO4611 - MOSFET

Datasheet Summary

Description

The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.5V) p-channel -60V -4.9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-ch.

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Datasheet Details

Part number AO4611
Manufacturer Alpha & Omega Semiconductors
File Size 190.45 KB
Description MOSFET
Datasheet download datasheet AO4611 Datasheet
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Full PDF Text Transcription

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AO4611 Complementary Enhancement Mode Field Effect Transistor General Description The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications). AO4611L is a Green Product ordering option. AO4611 and AO4611L are electrically identical. Features n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.5V) p-channel -60V -4.9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.
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