Datasheet4U Logo Datasheet4U.com

AO4614 - MOSFET

General Description

The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.28 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4614 40V P-Channel and N-Channel MOSFET UMW
AO4614B 40V Dual P + N-Channel MOSFET Alpha & Omega Semiconductor
AO4614B Dual Channel MOSFET Meitai Microelectronics
AO4611 Dual-Channel MOSFET VBsemi
AO4612 Dual-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4614A MOSFET
AO4610 MOSFET
AO4611 MOSFET
AO4612 MOSFET
AO4613 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4614 Complementary Enhancement Mode Field Effect Transistor General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications). AO4614L is a Green Product ordering option. AO4614 and AO4614L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.