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AO4613 - MOSFET

General Description

The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

It is ESD protected.

Key Features

  • n-channel p-channel VDS (V) = 30V -30V -6.1A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 G1 www. DataSheet4U. com S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Curr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4613 Complementary Enhancement Mode Field Effect Transistor General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (meets ROHS & Sony 259 specifications). AO4613L is a Green Product ordering option. AO4613 and AO4613L are electrically identical Features n-channel p-channel VDS (V) = 30V -30V -6.1A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 G1 www.DataSheet4U.