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AO4619 Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

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General Description

The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other applications.

Product Summary N-Channel VDS (V) = 30V ID = 7.4A (VGS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) P-Channel -30V -5.2A (VGS = -10V) RDS(ON) < 46mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View D2 D1 Pin1 Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G2 G1 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.4 Current F TA=70°C ID 6 Pulsed Drain Current B IDM 64 Power DissipationA TA=25°C TA=70°C PD 2 1.3 Avalanche Current B IAR 9 Repetitive avalanche energy 0.3mH B EAR 12 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -30 ±20 -5.2 -4.2 -25 2 1.3 11 18 -55 to 150 S1 p-channel Units V V A W A mJ °C Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA n-ch n-ch 50 82 Maximum Junction-to-Lead C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Steady-State t ≤ 10s Steady-State RθJL n-ch 41 RθJA p-ch p-ch 50 82 Maximum Junction-to-Lead C Steady-State RθJL p-ch 41 Max Units 62.5 °C/W 110 °C/W 50 °C/W 62.5 °C/W 110 °C/W 50 °C/W Alpha & Omega Semiconductor, Ltd.

Overview

AO4619 Complementary Enhancement Mode Field Effect Transistor.

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