AO4616 - 30V Complementary MOSFET

Description

The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Alpha & Omega Semiconductors

📥 Download Datasheet

Datasheet Details

Part number	AO4616
Manufacturer	Alpha & Omega Semiconductors
File Size	378.64 KB
Description	30V Complementary MOSFET
Datasheet	AO4616 Datasheet
Additional preview pages of the AO4616 datasheet.

📁 Similar Datasheet

AO4611 - Dual-Channel MOSFET (VBsemi)
AO4612 - Dual-Channel MOSFET (VBsemi)
AO4613 - N- and P-Channel 30V MOSFET (VBsemi)
AO4614 - 40V P-Channel and N-Channel MOSFET (UMW)
AO4614B - 40V Dual P + N-Channel MOSFET (Alpha & Omega Semiconductor)
AO4614B - Dual Channel MOSFET (Meitai Microelectronics)
AO4615 - N- and P-Channel MOSFET (VBsemi)
AO4618 - N- & P-Channel 40V MOSFET (VBsemi)
AO4618 - Complementary Trench MOSFET (Kexin)
AO4618-HF - Complementary Trench MOSFET (Kexin)

Other Datasheets by Alpha & Omega Semiconductors

AO4610 - MOSFET
AO4611 - MOSFET
AO4612 - MOSFET
AO4613 - MOSFET
AO4614 - MOSFET
AO4614A - MOSFET
AO4615 - MOSFET
AO4617 - MOSFET

Full PDF Text Transcription

Click to expand full text

AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested ESD Protected P-Channel -30V -7A (VGS=-10V) RDS(ON) < 22mΩ (VGS=-10V) < 40mΩ (VGS=-4.

Published: Jun 7, 2007 |