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AO4613 MOSFET

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Description

AO4613 Complementary Enhancement Mode Field Effect Transistor General .
The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Features

* n-channel p-channel VDS (V) = 30V -30V -6.1A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 G1 www. DataSheet4U. com S2 S1 SOIC-8 n-channel

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