AO4613 Datasheet - Alpha & Omega Semiconductors

AO4613 MOSFET

The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (meets ROHS & Sony 259 sp.

AO4613 Features

* n-channel p-channel VDS (V) = 30V -30V -6.1A (V GS=10V) ID = 7.2A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 G1 www.DataSheet4U.com S2 S1 SOIC-8 n-channel

AO4613_AlphaOmegaSemiconductors.pdf