AO6409 - P-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D S G D www. DataSheet4U. com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -5.0 -4.2 -30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD.

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