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AOB403 P-Channel MOSFET

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Description

AOB403 P-Channel Enhancement Mode Field Effect Transistor General .
The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

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Features

* VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS C

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