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AOB416 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor AOB416 *.

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Datasheet Specifications

Part number
AOB416
Manufacturer
INCHANGE
File Size
234.87 KB
Datasheet
AOB416-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current
* ID= 45A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable f

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 45 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature

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