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AOB428 N-Channel FET

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Description

www.DataSheet4U.com AOB428 N-Channel Enhancement Mode Field Effect Transistor General .
The AOB428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Features

* VDS (V) = 105V ID = 40 A RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Puls

AOB428 Distributors

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