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AOB405 P-Channel MOSFET

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Description

www.DataSheet4U.com AOB405 P-Channel Enhancement Mode Field Effect Transistor General .
The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

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Features

* VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Curren

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