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AOB414L N-Channel MOSFET

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Description

Rev 2: Nov.2004 AOB414, AOB414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General .
The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

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Features

* VDS (V) = 30V ID = 110A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 4.8mΩ (VGS = 4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,

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