AOD414 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

es VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C G Current B,G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD T.

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