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AOD4100 N-Channel MOSFET

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Description

AOD4100 N-Channel Enhancement Mode Field Effect Transistor General .
The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

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Features

* VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5m Ω (VGS = 20V) RDS(ON) < 9m Ω (VGS = 12V) RDS(ON) < 12m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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