AOD410 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C B Maximum 30 ±20 8 6 20 8 10 25 12.5 2.1 1.33 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche en.

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