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AOD4106 N-Channel MOSFET

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Description

AOD4106 N-Channel Enhancement Mode Field Effect Transistor General .
The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

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Features

* VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5mΩ (VGS = 20V) RDS(ON) < 6.5mΩ (VGS = 12V) RDS(ON) < 8.1mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain

AOD4106 Distributors

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