AOD4110 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested D TO-252 D-PAK Top View Drain Connected to Tab G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA Avalanche Current C Repetitive avalanche energy L=0.3.

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