AOE6930 - 30V Dual Asymmetric N-Channel FET
* Bottom Source Technology * Very Low RDS(ON) * Low Gate Charge * High Current Capability * RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.3mΩ < 0.83mΩ < 7.0mΩ
