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AOM040V120X2Q Silicon Carbide Power MOSFET

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Description

AOM040V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET .

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Features

* Proprietary αSiC MOSFET technology
* Low loss, with low RDS, ON
* Fast switching with low RG and low capacitance
* Flexible gate voltage range (VGS = 15 to 18 V)
* Low reverse recovery diode (Qrr)

Applications

* xEV Charger
* Electric Vehicle Supply Equipment (EVSE)
* Motor Drives
* Automotive Inverters Pin Configuration Top View Product Summary VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800 V 100% UIS Tested 1200 V 100 A 40 mΩ 143 nC 44 µJ D Bottom View (1) (1) (2)(3)

AOM040V120X2Q Distributors

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