AON2801 - Dual P-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AON2801
Manufacturer	Alpha & Omega Semiconductors
File Size	297.64 KB
Description	Dual P-Channel MOSFET
Datasheet	AON2801_AlphaOmegaSemiconductors.pdf

The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 D1 D2 D1 G2 S2 Top Bottom Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C CurrentA TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PDSM TJ, TSTG G1 G2 S1 S2 Maximum -20 ±8 -3 -2.3 -15 1.5 0.95 -55 to 150 Units V V A W.

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Published: Jan 12, 2014 |