AON3601 - Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AON3601
Manufacturer	Alpha & Omega Semiconductors
File Size	196.37 KB
Description	Field Effect Transistor
Datasheet	AON3601_AlphaOmegaSemiconductors.pdf

The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

n-channel VDS (V) = 30V ID = 6.6A (VGS=10V) RDS(ON) < 29m Ω (VGS=10V) < 42m Ω (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) free (meets ROHS & Sony 259 specifications). AON3601L is a Green Product ordering option. AON3601 and AON3601L are electrically identical. DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 G2 D2 D1 G1 S2 S1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source.

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Published: Jul 21, 2008 |