AON4407L P-Channel MOSFET

Alpha & Omega Semiconductors

Description

AON4407L www.datasheet4u.com P-Channel Enhancement Mode Field Effect Transistor General .
The AON4407L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AON4407L
Manufacturer: Alpha & Omega Semiconductors
File Size: 193.53 KB
Datasheet: AON4407L_AlphaOmegaSemiconductors.pdf
Description: P-Channel MOSFET

Features

* VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected! DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G Rg D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Volta

Applications

* OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www. aosmd. com AON4407L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 -ID (A) -ID(A) -2V 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: O

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AON4407L P-Channel MOSFET Alpha & Omega Semiconductors

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