Datasheet Details
| Part number | AONS66406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 366.18 KB |
| Description | 40V N-Channel MOSFET |
| Download | AONS66406 Download (PDF) |
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Overview: AONS66406 40V N-Channel AlphaSGT TM General.
| Part number | AONS66406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 366.18 KB |
| Description | 40V N-Channel MOSFET |
| Download | AONS66406 Download (PDF) |
|
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 30A < 6.1mΩ < 9.4mΩ Applications • High Frequency Switching and Synchronous Rectification • DC-Motor Driver 100% UIS Tested 100% Rg Tested DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS66406 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 30 30 110 22 17.5 20 60 36.5 14.5 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 2.8 Max 25 55 3.4 Units °C/W °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AONS66406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V I
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