AOP600 - MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOP600
Manufacturer	Alpha & Omega Semiconductors
File Size	182.66 KB
Description	MOSFET
Datasheet	AOP600_AlphaOmegaSemiconductors.pdf

The AOP600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS =- 4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 Uni.

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Published: Feb 18, 2010 |