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AOP608 MOSFET

AOP608 Description

www.DataSheet4U.com AOP608 Complementary Enhancement Mode Field Effect Transistor General .
The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

AOP608 Features

* n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33m Ω (VGS=10V) < 46m Ω (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4

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